王国祥

物理电子学博士,博导,副研究员。浙江龙港人,生于1985年10月。

个人教育和工作经历

2018.12-至今,宁波大学高等技术研究院, 副研究员

2017.08-2018.07,德国莱布尼茨表面改性研究所,访问学者

2014.07-2018.11,宁波大学高等技术研究院, 讲师

2011.09-2014.07,中科院上海技术物理研究所,物理电子学,工学博士学位

2008.09-2011.03,宁波大学,通信与信息系统,工学硕士学位;

2004.09-2008.07,黄河科技学院,通信工程,工学学士学位;

2020年获得宁波市科学技术进步奖二等奖;2020年、2018年分别获得宁波大学青年学术创新奖(自然科学类)三等奖、2018年度获大学生学科竞赛优秀指导教师、添路职业发展基金教师奖;2015-2017连续三年获校级“优秀班主任”荣誉称号;2014年获中科院院长奖学金优秀奖;2011年获得宁波大学“曹光彪科研优秀奖”一等奖。2011年起为“Advanced Materials”、"Nano Energy"、“Journal of Material Chemistry” 、 “Journal of Applied Physics” 、 “Applied Physics A”、“Ceramics International”和“Journal of the American Ceramic Society”等国际知名期刊的审稿人。Springer出版社出版英文专著一本,以第一作者在NPG Asia Materials(Nature子刊)、Materials & Design、ACS Applied Materials & Interfaces、Applied Physics Letters、Scripta Materialia、Crystal Growth & Design等刊物上发表SCI论文60余篇(SCI被引932余次,H因子18),申请国家发明专利13项 (已授权7项)。学科竞赛等指导情况:指导本科生获国家级大学生创新科研课题2项、浙江省科技厅“新苗人才计划”5项、校级课题7项;指导本科生以第一作者发表SCI论文多篇,获授权发明专利多项。

主要研究方向:

1、光电信息功能薄膜及OTS选通应用

2、掺杂超晶格/p-n异质结相变存储器

3、柔性热电材料及器件

4、拓扑存储材料及其在相变神经元中应用

电话:0574-87609873 传真: 0574-87600946 E-mail: wangguoxiang@nbu.edu.cn 

科研项目

主持国家自然科学基金面上和青年基金各1项,国家自然科学基金国际合作交流项目1个,省部级项目3个,宁波市自然科学基金2个。指导浙江省教育厅一般科研项目(研究生项目)1项,具体清单如下:

  1. 国家自然科学基金面上项目:面向相变神经元突触器件的n-p型异质结多阻态漂移微观机制及空洞自愈行为,项目批准号:62074089起止时间:2021.1-2024.12
  2. 国家自然科学基金青年基金:Zn-Sb基纳米复合相变薄膜的可控晶化和界面微结构稳定性研究,项目批准号:61604083,起止时间:2017.01-2019.12
  3. 国家自然科学基金国际合作交流项目:中德科学基金学术交流项目,项目批准号:GZ1504,起止时间:2018.11.4-12
  4. 浙江省自然科学基金:超低功耗超晶格用相变异质结制备及其稳定转变和自愈行为研究,项目批准号:LY20F040002,起止时间:2020.1-2022.12
  5. 浙江省自然科学基金:高性能纳米复合相变材料的设计、制备及相变机理研究,项目批准号:LQ15F040002,起止时间:2015.01-2017.12
  6. 国家重点实验室开放基金:红外多光谱硫卤玻璃的制备及性能,项目批准号:M201510,起止时间:2015.7-2017.6
  7. 宁波市自然科学基金:用于超低功耗相变存储器的Bi掺杂相变异质结超晶格制备及自愈机制研究,项目批准号:2019A610059,起止时间:2019.01-2020.12
  8. 宁波市自然科学基金:基于结晶诱导相变功能复合薄膜的制备与界面稳定性研究, 项目批准号:2017A610094,起止时间:2016.6.1-2018.5.31
  9. 省属高校基本科研业务费项目(理)/自由探索项目:面向相变神经元网络的新型拓扑异质结多值存储漂移机制及其器件结构协同优化研究项目批准号:SJLY2021013,起止时间:2021.1.1-2023.12.31
  10. 浙江省教育厅一般科研项目(研究生项目):随机相变神经元基质电阻漂移微观机制及存储特性研究,起止时间:2021.1.1-2021.12.31

代表性学术论著和授权专利:

近年来,以第一作者或通信作者发表论文60余篇(中科院版JCR分区大类一区8篇,二区30篇),部分成果如下:

  1. Nikolas Kraft, Guoxiang Wang*, Hagen Bryja, Andrea Prager, Jan Griebel, Andriy Lotnyk*,Phase and grain size engineering in Ge-Sb-Te-O by alloying with La-Sr-Mn-O towards improved material properties, Materials and Design, 199 (2021) 109392.(Top 1)

  2.  Guoxiang Wang*, Yawen Zhang, Andriy Lotnyk, Haizhou Shi, Chen Chen, High thermoelectric performance in ZnSb-SnTe pseudo-binary materials, Scripta Materialia , 2021, 194: 113670.(Top 1)

  3. G..X. Wang*, H.Z. Shi, A. Lotnyk, D.T. Shi, R.P. Wang, Conversion of p–n conduction type by spinodal decomposition in Zn-Sb-Bi phase-change alloys, NPG Asia Materials, 2020, 12, 17. (封面论文,Top 1)

  4. G.X. Wang*, C. Chen, H.Z. Shi, Y.M. Chen, X. Shen, A. Lotnyk, The realization of insulator-metal transition in a p-type metastable ZnSb by dual-phase nanostructure, Scripta Materialia, 2020, 186, 163-168. (Top 1)
  5. Kun Ren, Mengjiao Xia, Shuaishuai Zhu, Guoxiang Wang, Tianjiao Xin, Shilong Lv, Zhitang Song, Crystal-like glassy structure in Sc-doped BiSbTe ensuring excellent speed and power efficiency in phase change memory, ACS Applied Materials & Interfaces,2020, 12(14): 16601-16608. (合作论文, Top 1)
  6. X. Shen, Y.M. Chen, G.X. Wang, Y.G. Lv. Phase Change Memory and Optical Data Storage, Springer Handbook of Glass, Springer Handbooks, 2019, pp.1495-1520. (专著)
  7. G.X. Wang*, Y.W. Zhang, C. Li, et al. Self-limited growth of nanocrystals in structural heterogenous phase-change materials during the heating process, Crystal Growth & Design, 2019, 19, 1356-1363.
  8. F. Liu, G.X. Wang*, et al. Improved multi-level storage performance by insulator-metal transition of
    In2S3-doped Ge2Sb2Te5 films, Ceramics International, 2019, 45, 24090-24095.
  9. Y.W. Zhang, G.X. Wang*, F. Liu, et al. Improved phase-change properties of Sn–Zn–Sb alloys with a two-step crystallization process for multi-level data storage applications, Ceramics International, 2019, 45(13)16442-16449.
  10. Y.M. Chen, H. Pan, S. Mu, G.X. Wang, R.P. Wang*, X. Shen*, J.Q. Wang, S.X. Dai, T.F. Xu, Intermediate crystallization kinetics in Germanium-Tellurides, Acta Materialia, 2019, 164, 473. (Top 1)
  11. G.X. Wang*, A. Lotnyk, C. Li, et al. Oxygen filling voids and direct element imaging of metastable ZnSb structures by aberration-corrected scanning transmission electron microscopy, Scripta Materialia, 157 (2018) 115-119.  (Top 1)
  12. G.X. Wang, A. Lotnky, Q. H. Nie, et al. Shortening Nucleation time to enable ultrafast phase transition in Zn1Sb7Te12 Pseudo-binary alloy, Langmuir, 2018, 34, 15143-15149.
  13. G.X. Wang, H. Wang, A. Lotnyk, et al. Unique interface-driven crystallization mechanism and element-resolved structure imaging of ZnO-Ge2Sb2Te5 nanocomposites, Ceramics International, 2018,44 (18) 22497-22503.
  14. G.X. Wang*, C. Li, D.T. Shi, et al. Laser-induced metastable phase in crystalline phase-change films by confocal Raman spectrometer, Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy, 2018, 205:551–556.
  15. G.X. Wang, J.J. Li, D.F. Qi, et al. Controllable phase separation and improved grain growth mode of Mg-doped Sb7Te3 films, Ceramics International, 2017, 43:12452-12458.
  16. G.X. Wang, C. Li, D.T. Shi, et al. Controllable crystal growth and fast reversible crystallization-to-amorphization in Sb2Te-TiO2 films, Scientific Reports, 2017, 7:46279.
  17. C. Li, G.X. Wang*, D.F. Qi, et al. Suppression for an intermediate phase in ZnSb films by NiO-doping, Scientific Reports, 2017, 7:8644. 
  18. G.X. Wang*, C. Li, et al. Thermal stability and far infrared transmitting property of GeTe4-AsTe3-AgI glasses and glass-ceramics, J. Non-Cryst. Solids, 2017, 463:80-84.
  19. G.X. Wang*, X. Shen, et al. Improved thermal stability of C-doped Sb2Te films by increasing degree of disorder for memory application, Thin Solid Films, 2016, 615:345-350. 
  20. H. Wang, G.X. Wang*, et al. Compositional dependence of crystallization and structural stability in Ge-Sb-Se chalcogenide films, J. Non-Cryst. Solids, 2016, 453, 108-112.
  21. G.X. Wang, Y.M. Chen, et al. Controllable formation of nano-crystalline in Sb4Te films by Zn doping, J. Appl. Phys., 2015, 117(4):045303.
  22. G.X. Wang, X. Shen, et al. Understanding the role of Zn in improving the phase change behaviors of Sb2Te3 films, Thin Solid Films, 2015, 585:57-65. 
  23. G.X. Wang, X. Shen, et al. Investigation on pseudo-binary ZnSb-Sb2Te3 material for phase change memory application, J. Alloy Compd., 2015, 622: 341-346.
  24. H. Wang, G.X. Wang*, et al. Advantages of Mo4.9(Sb2Te)95.1 film with improved crystallization properties for phase change memory, Mater. Lett. 2015, 161:240-243.
  25. G.X. Wang, Y.M. Chen, et al. Reversibility and stability of ZnO-Sb2Te3 nanocomposite films for phase change memory application, ACS Appl. Mater. Interfaces, 2014, 6:8488. (Top 1)
  26. Y.M. Chen, G.X. Wang, et al. Crystallization behaviors of ZnxSb100-x thin films for good data retention applications, CrystEngComm, 2014,16:757-762.
  27. J.J. Li, G.X. Wang, et al. Fast crystallization and low-power amorphization of Mg-Sb-Te reversible phase-change films, CrystEngComm, 2014,16(32):7401-7405.
  28. G.X. Wang, X. Shen, et al. Improved phase-change characteristics of Zn-doped amorphous Sb7Te3films for high-speed and low-power phase change memory, Appl. Phys. Lett., 2013,103:031914. (自然指数期刊)
  29. X. Shen, G.X. Wang, et al. Enhanced thermal stability and electrical behavior of Zn-doped Sb2Te films for phase change memory application, Appl. Phys. Lett., 2013,102:131902. (自然指数期刊)
  30. G.X. Wang, X. Shenet al, Characterization of physical properties for Zn-doped Sb3Te films, Appl. Phys. Express, 2013,6:095801.
  31. G.X. Wang, Q.H. Nie, et al. Phase change behaviors of Zn-doped Ge2Sb2Te5 films, Appl. Phys. Lett., 2012,101:51906. (自然指数期刊)
  32. G.X. Wang, Q.H. Nie, et al. Advantages of Zn1.25Sb2Te3 material for phase change memory, Mater. Lett., 2012,87(15)135-138.
  33. G.X. Wang, X. Shen, et al. Improved thermal and electrical properties of the Al-doped Ge2Sb2Te5 films for phase-change random access memory, J. Phys. D: Appl. Phys., 2012,45:375302.
  34. G.X. Wang, X. Shen, et al. Te-based chalcogenide films with high thermal stability for phase change memory, J. Appl. Phys., 2012,111:093514. 
  35. G.X. Wang, Q.H. Nie, X.S. Wang, et al. New far-infrared transmitting Te-based chalcogenide glasses, J. Appl. Phys., 2011,110:043536.
  36. Qiuhua Nie, G.X. Wang *, et al. Study of thermal and optical properties of the Ge-Te-CdI2/ZnI2 far infrared transmitting glasses. J. Non-Cryst. Solids, 357(2011)2362.
  37. G.X. Wang, Q.H. Nie, et al. Research on the novel GeSe2-In2Se3-KBr chalcohalide optic glasses, Materials Research Bulletin, 45(2010)1141.
  38. G.X. Wang, Q.H. Nie, et al. Research on optical band gap of the novel GeSe2-In2Se3-KI chalcohalide glasses, Spectrochimica Acta Part A, 75(2010)1125.
  39. G.X. Wang, Q.H. Nie, et al. Effect of KI/AgI on thermal and optical properties of the novel GeS2-In2S3 chalcogenide glasses. Spectrochimica Acta Part A, 77(2010)821.
  40. 一种纳米复合ZnO-ZnSb相变存储薄膜材料及其制备方法;发明人:王国祥,李超,聂秋华,沈祥,吕业刚,张亚文,授权专利号:ZL 201711173404.0 
  41. 一种稀土Er掺杂Ge2Sb2Te5相变存储薄膜材料及其制备方法;发明人:谷婷,王国祥,刘画池,沈祥,吕业刚,李超,王慧,授权专利号:ZL 201710112369.5
  42. 一种用于光波导的Ge-Se-Zn硫系薄膜材料及其制备方法;发明人:王慧,王国祥,沈祥,许银生,陈飞飞,吕业刚,聂秋华,焦清,授权专利号:ZL201610250638.X
  43. 用于相变存储器的Zn-Sb-Se相变存储薄膜材料;发明人:王国祥,沈祥,徐培鹏,吕业刚,陈益敏,田曼曼,李军建,戴世勋,聂秋华,徐铁峰,授权专利号:ZL201410473416.5
  44. 一种纳米复合TiO2-Sb2Te相变存储薄膜材料及其制备方法; 发明人:王国祥,沈祥,徐培鹏,吕业刚,聂秋华,戴世勋,徐铁峰,陈飞飞,王慧,陈益敏,授权专利号:ZL201510154171.4

其他获奖成果

1、“新型相变材料及其存储器件应用基础研究”(3/8),2020,宁波市科学技术进步奖二等奖。

2、指导本科生团队一作品“新型纳米复合相变薄膜的优化设计与制备”获得2017年浙江省第十五届挑战杯大学生课外学术科技作品竞赛特等奖及公开答辩最佳创意奖(全省仅2名)。

3、指导本科生团队一作品“用于相变存储器的新型纳米复合薄膜介质光致相变研究”获得2017年全国第十五届挑战杯大学生课外学术科技作品竞赛一等奖。