吕业刚

微电子学博士,教授,硕士生导师。湖南永州人,生于1982年。

个人教育和工作经历

05/2013-至今,宁波大学信息科学与工程学院 
06/2014-12/2014,德国卡尔斯鲁厄理工学院访问学者
2010.03-2013.01,中科院上海微系统与信息技术研究所,微电子学,工学博士学位;
2000.09-2007.07,湘潭大学,测控技术与物理电子学,工学学士与硕士学位

主要从事相变存储薄膜、纳米线及其存储、探测器件的相关研究。已在Nano Letters, Applied Physics Letters等知名期刊上发表SCI收录论文30余篇,获得授权国家发明7项,博士论文入选2014年上海市研究生优秀成果。获得2017年宁波大学“最受欢迎的青年教师”荣誉称号,指导本科生参加浙江省第十四届挑战杯及第三十届全国青少年科技创新大赛均获得二等奖。

主持国家自然科学基金面上项目“基于相变纳米线的片上集成全光非易失性存储器的研究”,青年基金“GaSb基类超晶格薄膜及其在相变存储器中的应用”(已结题)、中德合作项目、浙江省公益技术应用研究和宁波市自然科学基金等。

主要研究方向:

1. 相变薄膜及相变存储器

2. 硫系纳米线及光电探测器件

3. 片上集成全光非易失性存储器

电话/传真: 0574-87609873/87600946 

QQ: 43977650

E-mail: lvyegang@nbu.edu.cn

代表性论文: 

  1. Lu Y., Stegmaier M., Nukala P., Giambra M. A., Ferrari S., Busacca A., Pernice W. H. P., and Agarwal R. Mixed-Mode Operation of Hybrid Phase-Change Nanophotonic Circuits. Nano. Lett., 2017, 17(1): 150-155.
  2. Lu Y., Wang M., Song S., Xia M., Jia Y., shen X., Wang G., Dai S., and Song Z. Multilevel data storage in multilayer phase change material. Appl. Phys. Lett., 2016, 109(17): 173103.
  3. Li Z., Lu Y. *, Ma Y., Song S., Shen X., Wang G., Dai S., and Song Z. Changes in electrical and structural properties of phase-change Ge-Sb-Te films by Zr addition. J Non-Cryst Solids, 2016, 452: 9-13.
  4. Lu Y. *, Song S., Shen X., Song Z., Wang G., and Dai S. Study on phase change properties of binary GaSb doped Sb–Se film. Thin Solid Films, 2015, 589: 215-220.
  5. Wang M., Lu Y. *, Shen X., Wang G., Li J., Dai S., Song S., and Song Z. Effect of Sb2Se on phase change characteristics of Ge2Sb2Te5. Crystengcomm, 2015, 17(26): 4871-4876.
  6. Ma Y., Lu Y. *, Li Z., Shen X., Wang G., Liu Y., and Dai S. Tunable Phase-Change Performance of Sb-Te-Se Film for Phase Change Memory. ECS Journal of Solid State Science and Technology, 2015, 5(3): P160-P163.
  7. Lu Y., Song S., Shen X., Song Z., Wu L., Wang G., and Dai S. Low-power phase change memory with multilayer TiN/W nanostructure electrode. Appl. Phys. A-Mater. Sci. Process., 2014, 117(4): 1933-1940.
  8. Lu Y., Song S., Shen X., Wang G., Wu L., Song Z., Liu B., and Dai S. Phase change characteristics of Sb-rich Ga–Sb–Se materials. J. Alloys Compd., 2014, 586(0): 669-673.
  9. Lu Y., Song S., Shen X., Wu L., Song Z., Liu B., Dai S., and Nie Q. Investigation of Ga8Sb34Se58 Material for Low-Power Phase Change Memory. ECS Solid State Letters, 2013, 2(10): P94-P96.
  10. Lu Y., Zhang Z., Song S., Shen X., Wang G., Cheng L., Dai S., and Song Z. Performance improvement of Ge-Sb-Te material by GaSb doping for phase change memory. Appl. Phys. Lett., 2013, 102(24): 241907.