Yegang Lu (吕业刚)

Associate Professor
Faculty of Electrical Engineering and Computer Science
Ningbo University, Ningbo 315211, China
Tel: 86-754-87600947, Email:


PhD Microelectronics and Solid State Electronics, Shanghai Institute of Microsystem and Information technology, Chinese Academy of Sciences, China, 2013
MSc Physical Electronics, Xiangtan University, China, 2007
BSc Measurement & Control Technology and instrument, Xiangtan University, China, 2004

Work Experiences

2015.11–Present, Associate Professor, Faculty of Electrical Engineering and Computer Science, Ningbo University.
2013.5–2015.10, Lecturer, Faculty of Electrical Engineering and Computer Science, Ningbo University.

Visiting Experiences

2017.8–Present, Visiting Scholar, Agarwal Group, University of Pennsylvania.
2014.6–2014.12, Visiting Scholar, Pernice Group, Karlsruhe Institute of Technology.

Teaching Activities

Principle and Application of Single Chip System, 2013–present, for undergraduates, Ningbo University
Principle and Application of Embedded System, 2013-present for undergraduates, Ningbo University

Research Interests

Electronic and Photonic Memories.
Phase change materials.

Honors & Awards

Humboldt Research Fellow, Germany, 2018
Zhedong Youth Scholar, Ningbo University, 2018
The Most Popular Young Teacher Award, Ningbo University, 2017


(1) Li Z., Lu Y., Wang M., Shen X., Zhang X., Song S., and Song Z. Controllable multilevel resistance state of superlattice-like GaSb/Ge 2 Te films for ultralong retention phase-change memory. J Non-Cryst Solids, 2018, 481: 110-115.
(2) Lu Y., Stegmaier M., Nukala P., Giambra M. A., Ferrari S., Busacca A., Pernice W. H. P., and Agarwal R. Mixed-Mode Operation of Hybrid Phase-Change Nanophotonic Circuits. Nano. Lett., 2017, 17(1): 150-155.
(3) Lu Y., Wang M., Song S., Xia M., Jia Y., shen X., Wang G., Dai S., and Song Z. Multilevel data storage in multilayer phase change material. Appl. Phys. Lett., 2016, 109(17): 173103.
(4) Li Z., Lu Y., Ma Y., Song S., Shen X., Wang G., Dai S., and Song Z. Changes in electrical and structural properties of phase-change Ge-Sb-Te films by Zr addition. J Non-Cryst Solids, 2016, 452: 9-13.
(5) Wang M., Lu Y., Shen X., Wang G., Li J., Dai S., Song S., and Song Z. Effect of Sb2Se on phase change characteristics of Ge2Sb2Te5. Crystengcomm, 2015, 17(26): 4871-4876.
(6) Ma Y., Lu Y., Li Z., Shen X., Wang G., Liu Y., and Dai S. Tunable Phase-Change Performance of Sb-Te-Se Film for Phase Change Memory. ECS Journal of Solid State Science and Technology, 2015, 5(3): P160-P163.
(7) Lu Y., Song S., Shen X., Song Z., Wang G., and Dai S. Study on phase change properties of binary GaSb doped Sb–Se film. Thin Solid Films, 2015, 589(0): 215-220.
(8) Lu Y., Song S., Shen X., Wang G., Wu L., Song Z., Liu B., and Dai S. Phase change characteristics of Sb-rich Ga–Sb–Se materials. J. Alloys Compd., 2014, 586(0): 669-673.
(9) Lu Y., Zhang Z., Song S., Shen X., Wang G., Cheng L., Dai S., and Song Z. Performance improvement of Ge-Sb-Te material by GaSb doping for phase change memory. Appl. Phys. Lett., 2013, 102(24): 241907.